Plasma Etching Chemistry for Smoothening of Ultrananocrystalline Diamond Films

A new process to controllably smoothen ultrananocrystalline diamond films using H2/O2 plasma is presented. Diamond films were exposed to oxygen, hydrogen and hydrogen/oxygen mixture (19:1) plasmas. Evolution of morphology and thickness were monitored ex-situ using scanning electron microscopy (SEM)...

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Veröffentlicht in:	ECS solid state letters 2015-08, Vol.4 (10), p.P80-P84
Hauptverfasser:	Jaramillo-Cabanzo, Daniel F., Willing, Gerold A., Sunkara, Mahendra K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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