Highly Selective Directional Atomic Layer Etching of Silicon

Following Moore's Law, feature dimensions will soon reach dimensions on an atomic scale. For the most advanced structures, conventional plasma etch processes are unable to meet the requirement of atomic scale fidelity. The breakthrough that is needed can be found in atomic layer etching or ALE,...

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Veröffentlicht in:	ECS journal of solid state science and technology 2015-01, Vol.4 (6), p.N5010-N5012
Hauptverfasser:	Tan, Samantha, Yang, Wenbing, Kanarik, Keren J., Lill, Thorsten, Vahedi, Vahid, Marks, Jeff, Gottscho, Richard A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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