Comparison of the Performance of Lateral and Vertical InGaN/GaN-Based Light-Emitting Diodes with GaN and AlN Nucleation Layers

We investigated the effects of in situ GaN and sputtered AlN nucleation layers on the output power of GaN-based blue (445 nm) LEDs on patterned sapphire substrate (PSS) and planar sapphire substrates. Both the PSS LEDs and planar LEDs showed the same operation voltages, but the LEDs with the AlN lay...

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Veröffentlicht in:	ECS journal of solid state science and technology 2016-01, Vol.5 (2), p.Q1-Q6
Hauptverfasser:	Kang, Daesung, Jung, Myunghoon, Choi, Eunsil, Song, Kiyoung, Jeong, Hwanhee, Song, June-O, Kim, Da-Som, Kim, Sun-Kyung, Seong, Tae-Yeon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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