Spacer Engineering on Nanosheet FETs towards Device and Circuit Perspective

The Nanosheet FET (NS FET) has proven to be a potential candidate for sub-5-nm nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by incorporating various device engineering at both device and circuit levels. Various device topologies like lightly doped drain/sourc...

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Veröffentlicht in:	ECS journal of solid state science and technology 2023-05, Vol.12 (5), p.53009
Hauptverfasser:	Kumari, N. Aruna, Sreenivasulu, V. Bharath, Ajayan, J., Reddy, T. Janardhan, Prithvi, P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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