Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si1−xGex Epitaxial Growth

In-situ doping process of B and P in CVD Si and Si1−xGex (100) epitaxial growth is investigated using SiH4-GeH4-dopant gas (B2H6 or PH3)-H2 gas mixture. For lower dopant gas partial pressure, the in situ doping is explained quantitatively by the Langmuir-type adsorption and reaction at Si-Si, Si-Ge...

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Veröffentlicht in:	ECS journal of solid state science and technology 2021-02, Vol.10 (2)
Hauptverfasser:	Murota, Junichi, Ishii, Hiromu
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Vapor Deposition Epitaxial Growth Group IV Semiconductor In-Situ Doping
Online-Zugang:	Volltext
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