Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation

Remote and not in-flux gamma irradiation effects have been examined on the cumulative dose ranges from 250 Gy to 1 kGy by current-voltage (I–V) and capacitance-voltage (C-V) characteristics for Ni/n-GaN Schottky barrier diodes (SBDs). The interface and charge transport properties of Ni/n-GaN SBDs ar...

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Veröffentlicht in:	ECS journal of solid state science and technology 2020-10, Vol.9 (9), p.93017
Hauptverfasser:	Kumar, Santosh, Mariswamy, Vinay Kumar, Kumar, Ashish, Kandasami, Asokan, Sannathammegowda, Krishnaveni
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge transport mechanism Electrical parameters Gamma irradiation GaN SBDs Remote and not influx
Online-Zugang:	Volltext
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