The Effect of Oxgen Species on the ZnO TFT Prepared by Atmosphere Pressure Plasma Jet
Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxygen gas was incorporated into plasma gas (N2)...
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| Veröffentlicht in: | ECS transactions 2012-04, Vol.45 (7), p.231-237 |
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| container_title | ECS transactions |
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| creator | Wu, Chien-Hung Chang, Kow-Ming Huang, Sung-Hung Deng, I-Chung Chi, Chia-Wei Wu, Chin-Jyi Chang, Chia-Chiang |
| description | Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxygen gas was incorporated into plasma gas (N2) in the percentage of 0%-1% (O2/N2+O2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm2/Vs and an Ion/Ioff current ratio of 4.63x109 were obtained. |
| doi_str_mv | 10.1149/1.3701543 |
| format | Article |
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The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxygen gas was incorporated into plasma gas (N2) in the percentage of 0%-1% (O2/N2+O2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm2/Vs and an Ion/Ioff current ratio of 4.63x109 were obtained.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3701543</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2012-04, Vol.45 (7), p.231-237</ispartof><rights>2012 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1702-c1887db536e6ac0f5a7145db96f1abf1142c3117d95c641d4f0ac80685fff0823</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/1.3701543/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53824,53871</link.rule.ids></links><search><creatorcontrib>Wu, Chien-Hung</creatorcontrib><creatorcontrib>Chang, Kow-Ming</creatorcontrib><creatorcontrib>Huang, Sung-Hung</creatorcontrib><creatorcontrib>Deng, I-Chung</creatorcontrib><creatorcontrib>Chi, Chia-Wei</creatorcontrib><creatorcontrib>Wu, Chin-Jyi</creatorcontrib><creatorcontrib>Chang, Chia-Chiang</creatorcontrib><title>The Effect of Oxgen Species on the ZnO TFT Prepared by Atmosphere Pressure Plasma Jet</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxygen gas was incorporated into plasma gas (N2) in the percentage of 0%-1% (O2/N2+O2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm2/Vs and an Ion/Ioff current ratio of 4.63x109 were obtained.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNptkEtrwzAQhEVpoWnaQ_-BLj304FRrWQ8fQ0j6IOBCnUsvRpZXTUJiG8mB5t_XJj72sjvMfizDEPIIbAaQpC8w44qBSPgVmUDKdSQVV9ejFlrGt-QuhD1jssfVhGzyLdKlc2g72jia_f5gTb9atDsMtKlp15-_64zmq5x-emyNx4qWZzrvjk1ot-hxsEM4DeJgwtHQD-zuyY0zh4AP456SzWqZL96idfb6vpivIwuKxf3UWlWl4BKlscwJoyARVZlKB6Z0fcLYcgBVpcLKBKrEMWM1k1o455iO-ZQ8X_5a34Tg0RWt3x2NPxfAiqGPAoqxj559urC7pi32zcnXfbJ_uD_Ei1wH</recordid><startdate>20120427</startdate><enddate>20120427</enddate><creator>Wu, Chien-Hung</creator><creator>Chang, Kow-Ming</creator><creator>Huang, Sung-Hung</creator><creator>Deng, I-Chung</creator><creator>Chi, Chia-Wei</creator><creator>Wu, Chin-Jyi</creator><creator>Chang, Chia-Chiang</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120427</creationdate><title>The Effect of Oxgen Species on the ZnO TFT Prepared by Atmosphere Pressure Plasma Jet</title><author>Wu, Chien-Hung ; Chang, Kow-Ming ; Huang, Sung-Hung ; Deng, I-Chung ; Chi, Chia-Wei ; Wu, Chin-Jyi ; Chang, Chia-Chiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1702-c1887db536e6ac0f5a7145db96f1abf1142c3117d95c641d4f0ac80685fff0823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Wu, Chien-Hung</creatorcontrib><creatorcontrib>Chang, Kow-Ming</creatorcontrib><creatorcontrib>Huang, Sung-Hung</creatorcontrib><creatorcontrib>Deng, I-Chung</creatorcontrib><creatorcontrib>Chi, Chia-Wei</creatorcontrib><creatorcontrib>Wu, Chin-Jyi</creatorcontrib><creatorcontrib>Chang, Chia-Chiang</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Chien-Hung</au><au>Chang, Kow-Ming</au><au>Huang, Sung-Hung</au><au>Deng, I-Chung</au><au>Chi, Chia-Wei</au><au>Wu, Chin-Jyi</au><au>Chang, Chia-Chiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effect of Oxgen Species on the ZnO TFT Prepared by Atmosphere Pressure Plasma Jet</atitle><jtitle>ECS transactions</jtitle><addtitle>ECS Trans</addtitle><date>2012-04-27</date><risdate>2012</risdate><volume>45</volume><issue>7</issue><spage>231</spage><epage>237</epage><pages>231-237</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, and oxygen gas was incorporated into plasma gas (N2) in the percentage of 0%-1% (O2/N2+O2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm2/Vs and an Ion/Ioff current ratio of 4.63x109 were obtained.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/1.3701543</doi><tpages>7</tpages></addata></record> |
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| ispartof | ECS transactions, 2012-04, Vol.45 (7), p.231-237 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | The Effect of Oxgen Species on the ZnO TFT Prepared by Atmosphere Pressure Plasma Jet |
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