(Invited) Admittance Spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures

Interface states at the gate oxide/channel of metal oxide semiconductor (MOS) transistors generally result in detrimental effects on the device performance which need to be considered for the new generations of high-k dielectrics. In this paper, the admittance of Gadolinium silicate (GdSiO) and Lant...

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Bibliographische Detailangaben

Hauptverfasser:	Ducroquet, Frederique, Engström, Olof, Gottlob, Heinrich D., Lopes, Joao Marcelo J., Schubert, Jürgen
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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