(Invited) Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics

In this paper we present the electrical characteristics of Metal/Al2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In0.53Ga0.47As n channel MOSFET. From analysis of...

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Bibliographische Detailangaben
Hauptverfasser:	Cherkaoui, Karim, Djara, Vladimir, O'Connor, Éamon, Lin, Jun, Negara, Muhammad A., Povey, Ian M., Monaghan, Scott, Hurley, Paul K.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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