Ultra-Low Copper Baths for Sub-35nm Copper Interconnects
The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improv...
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creator | Atanasova, Tanya A. Carbonell, Laureen Caluwaerts, Rudy Tokei, Zsolt Strubbe, Katrien Vereecken, Philippe M. |
description | The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the copper concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm trenches were performed. In addition, proposing a high acid chemistry that is also compatible with direct plating, would enable the in-situ copper seed formation and filling in one and the same process step for direct plating on non-copper seed. |
doi_str_mv | 10.1149/1.3699383 |
format | Conference Proceeding |
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As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the copper concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm trenches were performed. In addition, proposing a high acid chemistry that is also compatible with direct plating, would enable the in-situ copper seed formation and filling in one and the same process step for direct plating on non-copper seed.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3699383</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2012, Vol.41 (35), p.83-97</ispartof><rights>2012 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c259t-c9c9c31c68a171816f184be2186635489073d2ff4fde9f2dbef0d6a4174380933</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/1.3699383/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53825,53872</link.rule.ids></links><search><creatorcontrib>Atanasova, Tanya A.</creatorcontrib><creatorcontrib>Carbonell, Laureen</creatorcontrib><creatorcontrib>Caluwaerts, Rudy</creatorcontrib><creatorcontrib>Tokei, Zsolt</creatorcontrib><creatorcontrib>Strubbe, Katrien</creatorcontrib><creatorcontrib>Vereecken, Philippe M.</creatorcontrib><title>Ultra-Low Copper Baths for Sub-35nm Copper Interconnects</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the copper concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm trenches were performed. 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As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the copper concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm trenches were performed. In addition, proposing a high acid chemistry that is also compatible with direct plating, would enable the in-situ copper seed formation and filling in one and the same process step for direct plating on non-copper seed.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/1.3699383</doi><tpages>15</tpages></addata></record> |
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title | Ultra-Low Copper Baths for Sub-35nm Copper Interconnects |
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