OCD Metrology Evaluation of p-MOS Silicon Recess with Three Dimensional Design Pattern

OCD metrology has been proven to be a fast, accurate, and non-destructive knob for in-situ monitoring of line width and profile. In order to main Moore's law, device dimension is moving towards 45nm technology node and beyond, it is becoming increasingly difficult to perform the in-situ evaluat...

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Bibliographische Detailangaben

Hauptverfasser:	Huang, Yi, Han, Qiu-Hua, Sui, Yun-Qi, Xu, Chuan-Jin, Meng, Xiao-Ying, Li, Chao-Wei, Ni, Sheng
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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