Optimization of Metallization Processes for 28-nm-Node Low-k /Cu Multilevel Interconnects

As design rules shrink, integrated circuits speed becomes more impacted by low k (LK) dielectric / Cu back end of line (BEOL) interconnects. At 28 nm node, the copper line aspect ratio (AR) is usually equal to or greater than 2.5, and the line trench gap-fill AR is even bigger (> = 3.5). This mak...

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Hauptverfasser:	Bao, Yu, Jing, Xuezheng, Tan, Jingjing, Ping, Yanlei, Zhang, Ziying, Xiao, Haibo, Wang, Xiaona, Bai, Fanfei, Zhang, Beichao
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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