Effect of AlGaN Barrier Thickness on the Cut Off Frequency of AlGaN/GaN High Electron Mobility Transistors

An analytical- numerical model for the drain source and gate source currents of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of AlGaN barrier thickness on the cut off frequency in different gate source and drain source biases. Salient features of the mod...

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Bibliographische Detailangaben

Hauptverfasser:	Yahyazadeh, Rajab, Hashempour, Zahra
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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