Fabrication and Electrical Characterization of GaAs/GaN Junctions

We fabricate p + -GaAs/n-GaN and n + -GaAs/n-GaN junctions using surface activate bonding and measure their capacitance-voltage and current-voltage characteristics. We find that the characteristics of the two junctions are close to each other, which suggests that the band profiles of GaN layers in t...

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Veröffentlicht in:	ECS transactions 2023-09, Vol.112 (3), p.111-118
Hauptverfasser:	Ishimi, Shota, Hirose, Makoto, Shimizu, Yasuo, Ohno, Yutaka, Nagai, Yasuyoshi, Liang, Jianbo, Shigekawa, Naoteru
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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