(Invited, Digital Presentation) Ion Implantation for Amorphous-InGaZnO Sheet Resistance Control Technique

As a next-generation electronics material, amorphous-InGaZnO (a-IGZO) film devices were investigated. In order to further utilize a-IGZO films, we carried out conventional ion of boron (B + ) or neon (Ne + ) implantations in a-IGZO thin films on glass and analyzed the implanted a-IGZO via Hall measu...

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Veröffentlicht in:	ECS transactions 2022-09, Vol.109 (6), p.67-78
Hauptverfasser:	Ui, Toshimasa, Yasuta, Keisuke, Yamane, Yuya, Tatemichi, Junichi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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