(Digital Presentation) Extending the Application of Capacitively Coupled Plasma Etching Tools to the Front-End-of-Line Fin-Cut Etching Process for FinFET Mass Production

As FinFET scales down to advanced technology nodes, Self-aligned Quadruple Patterning (SaQP) scheme is widely deployed for Fin formation, where two mandrels (MD1 and MD2) and corresponding mandrel spacers (MD1SP and MD2SP) are patterned for accurate CD transferring. The Fin-cut etching process of th...

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Veröffentlicht in:	ECS transactions 2022-05, Vol.108 (5), p.63-70
Hauptverfasser:	Zhao, Zhenyang, Chen, Zhuofan, Ke, Xing, Li, Fengmei, Song, Jia, Ji, Shiliang, Zhang, Haiyang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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