Si3N4 Etching with Carboxylic-Acid-Containing Superheated Water

A selective Si 3 N 4 etching is required in the semiconductor manufacturing process. In general, Si 3 N 4 was selectively etched to SiO 2 in hot H 3 PO 4 . However, since the existing Si 3 N 4 etching process used a high-temperature and high-concentration acid solution, environment, health, and safe...

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Veröffentlicht in:	ECS transactions 2022-05, Vol.108 (4), p.161-166
Hauptverfasser:	Son, Changjin, Park, Taegun, Kim, Taehyeon, Lim, Sangwoo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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