Low-Temperature Silicon Epitaxy for Atomic Precision Devices

Low-Temperature Silicon Epitaxy for Atomic Precision Devices

We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.

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Bibliographische Detailangaben
Hauptverfasser: Anderson, Evan M, Katzenmeyer, Aaron M, Luk, Ting S, Campbell, DeAnna M, Marshall, Michael T, Bussmann, Ezra, Ohlhausen, James, Lu, Ping, Kotula, Paul G, Ward, Daniel R, Lu, Tzu-Ming, Misra, Shashank
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
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Beschreibung
Zusammenfassung:We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/09301.0037ecst