Selective Si3N4 Etching in Si3N4/SiO2 Pair-Layer Stack Using Non-H3PO4-Based Superheated Water

The selective etching of Si3N4 and SiO2 is a crucial step in the semiconductor process. In general, hot phosphoric acid is used to selectively etch Si3N4 to SiO2. In this study, superheated water was used for selective etching of Si3N4 to SiO2. The Si3N4 and SiO2 etching rates depend on the OH- conc...

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Veröffentlicht in:	ECS transactions 2019-07, Vol.92 (2), p.143-148
Hauptverfasser:	Son, Changjin, Lim, Sangwoo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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