(Invited) Oxygen Precipitation in Highly Doped Silicon Substrates
This paper reviews oxygen precipitation in heavily arsenic-doped silicon. A wide arsenic concentration range is explored, from 3 × 1018 cm-3 to 4 × 1019 cm-3. A precipitation retardation effect is observed in the arsenic doped samples when the dopant concentration is higher than 1.7x1019 cm-3 compar...
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