Reduction of Thermal Stress in Copper TSV due to Annealing by Low TEC Copper

Copper through-silicon via (TSV) is the key technology used in 3D packaging. During the fabrication process, copper TSV is exposed to a high temperature between 400°C and 600°C. For conventional copper TSV, we observed the cracks at the bottom of TSV after annealing at 500°C and a very high copper e...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dinh, V Quy, Kondo, Kazuo, Hirato, Tetsuji
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!