(Invited) Complementary III-V Heterojunction Tunnel FETs Monolithically Integrated on Silicon

The tunnel FET (TFET) is considered as one of the most promising devices for ultra-low power operation, and it is clear that heterojunction devices are required to achieve simultaneously steep slope and high on-current (Ion). However, technologically, heterojunction TFETs are much more complex than...

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Bibliographische Detailangaben

Hauptverfasser:	Convertino, Clarissa, Schmid, Heinz, Czornomaz, Lukas, Riel, Heike, Sant, Saurabh, Schenk, Andreas, Moselund, Kirsten
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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