Resistive Switching Comparison between Cu/TaOx/Ru and Cu/TaOx/Pt Memory Cells

Building nonvolatile memory (NVM) directly into a CMOS low-k/Cu interconnect module would reduce latency in connectivity constrained devices and reduce chip's footprint by stacking memory on top of the logic circuits. One good candidate for NVM is the well-behaved Cu/TaOx/Pt resistive switching...

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Bibliographische Detailangaben

Hauptverfasser:	Fan, Ye, Al-Mamun, Mohammad, Conlon, Ben, King, Sean W., Orlowski, Marius K
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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