(Invited) Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwiched between TiN electrodes. The device is fabricated via processes and materials compatib...

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Veröffentlicht in:	ECS transactions 2017-01, Vol.75 (32), p.3-12
Hauptverfasser:	Tranchant, Julien, Sandrini, Jury, Janod, Etienne, Sacchetto, Davide, Corraze, Benoit, Besland, Marie-Paule, Ghanbaja, Jaafar, De Micheli, Giovanni, Gaillardon, Pierre-Emmanuel, Cario, Laurent
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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