Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

III-V compound semiconductors and Ge are promising future channel materials because of their high carrier mobility. For example the electron mobility of InAs is about 20 times faster than that of Si at room temperature and hole mobility of Ge is about 5 times faster than that of Si. In this paper, w...

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Veröffentlicht in:ECS transactions 2016-10, Vol.75 (5), p.265-270
Hauptverfasser: Yoshida, Akinobu, Tomioka, Katsuhiro, Ishizaka, Fumiya, Chiba, Kohei, Motohisa, Junichi
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Tomioka, Katsuhiro
Ishizaka, Fumiya
Chiba, Kohei
Motohisa, Junichi
description III-V compound semiconductors and Ge are promising future channel materials because of their high carrier mobility. For example the electron mobility of InAs is about 20 times faster than that of Si at room temperature and hole mobility of Ge is about 5 times faster than that of Si. In this paper, we report direct integration of InGaAs nanowires (NWs) on Ge(111) substrate by selective-area metal organic vapor phase epitaxy (SA-MOVPE) for realization of high carrier mobility InGaAs/Ge hybrid CMOS applications, and characterization of the composition and growth modes of InGaAs NWs by X-ray diffraction (XRD) measurement.
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title Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications
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