(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow

Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today-subquantum CBRAM-and highl...

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Hauptverfasser: Jameson, John R., Blanchard, Philippe, Dinh, John, Gonzales, Nathan, Gopalakrishnan, Vasudevan, Guichet, Berenice, Hollmer, Shane, Hsu, Sue, Intrater, Gideon, Kamalanathan, Deepak, Kim, David, Koushan, Foroozan, Kwan, Ming, Lewis, Derric, Pedersen, Bård, Ramsbey, Mark, Runnion, Ed, Shields, Jeffrey, Tsai, Kevin, Tysdal, Aaron, Wang, Daniel, Gopinath, Venkatesh
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container_start_page 41
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container_volume 75
creator Jameson, John R.
Blanchard, Philippe
Dinh, John
Gonzales, Nathan
Gopalakrishnan, Vasudevan
Guichet, Berenice
Hollmer, Shane
Hsu, Sue
Intrater, Gideon
Kamalanathan, Deepak
Kim, David
Koushan, Foroozan
Kwan, Ming
Lewis, Derric
Pedersen, Bård
Ramsbey, Mark
Runnion, Ed
Shields, Jeffrey
Tsai, Kevin
Tysdal, Aaron
Wang, Daniel
Gopinath, Venkatesh
description Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today-subquantum CBRAM-and highlights similarities and differences between it and its predecessors. The materials requirements of subquantum CBRAM cells are described, and new insight into the switching mechanism is provided. Finally, its electrical characteristics are benchmarked, and its suitability for applications such as embedded memory, the Internet of Things (IoT), and radiation-tolerant electronics is summarized.
doi_str_mv 10.1149/07505.0041ecst
format Conference Proceeding
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_1149_07505_0041ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/07505.0041ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c274t-3dfdd26e1e03b53e23cdbe25ebbfc114b628f59ce9915d7ac833dc2c3c5effee3</originalsourceid><addsrcrecordid>eNp1kDtPwzAUhS0EEqWwMntsUVP8iPNgayIelQpIKMxWYl8XVzSu7LQV_55Ay8h07nC_o6MPoWtKppTG-S1JBRFTQmIKKnQnaEBznkVJytPT4y2yhJ2jixBWhCQ9kw5QMZq3O9uBHuPStXqrOrsDXHirl7Zd4rfZMx6VRR_jO1x9QDvBL24_wXWrceXWznu3v0Rnpv4McHXMIXp_uK_Kp2jx-jgvZ4tIsTTuIq6N1iwBCoQ3ggPjSjfABDSNUf2YJmGZEbmCPKdCp7XKONeKKa4EGAPAh2h66FXeheDByI2369p_SUrkjwH5a0D-GeiBmwNg3Uau3Na3_bz_nr8BrB5bhA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Jameson, John R. ; Blanchard, Philippe ; Dinh, John ; Gonzales, Nathan ; Gopalakrishnan, Vasudevan ; Guichet, Berenice ; Hollmer, Shane ; Hsu, Sue ; Intrater, Gideon ; Kamalanathan, Deepak ; Kim, David ; Koushan, Foroozan ; Kwan, Ming ; Lewis, Derric ; Pedersen, Bård ; Ramsbey, Mark ; Runnion, Ed ; Shields, Jeffrey ; Tsai, Kevin ; Tysdal, Aaron ; Wang, Daniel ; Gopinath, Venkatesh</creator><creatorcontrib>Jameson, John R. ; Blanchard, Philippe ; Dinh, John ; Gonzales, Nathan ; Gopalakrishnan, Vasudevan ; Guichet, Berenice ; Hollmer, Shane ; Hsu, Sue ; Intrater, Gideon ; Kamalanathan, Deepak ; Kim, David ; Koushan, Foroozan ; Kwan, Ming ; Lewis, Derric ; Pedersen, Bård ; Ramsbey, Mark ; Runnion, Ed ; Shields, Jeffrey ; Tsai, Kevin ; Tysdal, Aaron ; Wang, Daniel ; Gopinath, Venkatesh</creatorcontrib><description>Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today-subquantum CBRAM-and highlights similarities and differences between it and its predecessors. The materials requirements of subquantum CBRAM cells are described, and new insight into the switching mechanism is provided. Finally, its electrical characteristics are benchmarked, and its suitability for applications such as embedded memory, the Internet of Things (IoT), and radiation-tolerant electronics is summarized.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/07505.0041ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2016, Vol.75 (5), p.41-54</ispartof><rights>2016 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c274t-3dfdd26e1e03b53e23cdbe25ebbfc114b628f59ce9915d7ac833dc2c3c5effee3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/07505.0041ecst/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Jameson, John R.</creatorcontrib><creatorcontrib>Blanchard, Philippe</creatorcontrib><creatorcontrib>Dinh, John</creatorcontrib><creatorcontrib>Gonzales, Nathan</creatorcontrib><creatorcontrib>Gopalakrishnan, Vasudevan</creatorcontrib><creatorcontrib>Guichet, Berenice</creatorcontrib><creatorcontrib>Hollmer, Shane</creatorcontrib><creatorcontrib>Hsu, Sue</creatorcontrib><creatorcontrib>Intrater, Gideon</creatorcontrib><creatorcontrib>Kamalanathan, Deepak</creatorcontrib><creatorcontrib>Kim, David</creatorcontrib><creatorcontrib>Koushan, Foroozan</creatorcontrib><creatorcontrib>Kwan, Ming</creatorcontrib><creatorcontrib>Lewis, Derric</creatorcontrib><creatorcontrib>Pedersen, Bård</creatorcontrib><creatorcontrib>Ramsbey, Mark</creatorcontrib><creatorcontrib>Runnion, Ed</creatorcontrib><creatorcontrib>Shields, Jeffrey</creatorcontrib><creatorcontrib>Tsai, Kevin</creatorcontrib><creatorcontrib>Tysdal, Aaron</creatorcontrib><creatorcontrib>Wang, Daniel</creatorcontrib><creatorcontrib>Gopinath, Venkatesh</creatorcontrib><title>(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today-subquantum CBRAM-and highlights similarities and differences between it and its predecessors. The materials requirements of subquantum CBRAM cells are described, and new insight into the switching mechanism is provided. Finally, its electrical characteristics are benchmarked, and its suitability for applications such as embedded memory, the Internet of Things (IoT), and radiation-tolerant electronics is summarized.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2016</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp1kDtPwzAUhS0EEqWwMntsUVP8iPNgayIelQpIKMxWYl8XVzSu7LQV_55Ay8h07nC_o6MPoWtKppTG-S1JBRFTQmIKKnQnaEBznkVJytPT4y2yhJ2jixBWhCQ9kw5QMZq3O9uBHuPStXqrOrsDXHirl7Zd4rfZMx6VRR_jO1x9QDvBL24_wXWrceXWznu3v0Rnpv4McHXMIXp_uK_Kp2jx-jgvZ4tIsTTuIq6N1iwBCoQ3ggPjSjfABDSNUf2YJmGZEbmCPKdCp7XKONeKKa4EGAPAh2h66FXeheDByI2369p_SUrkjwH5a0D-GeiBmwNg3Uau3Na3_bz_nr8BrB5bhA</recordid><startdate>20160819</startdate><enddate>20160819</enddate><creator>Jameson, John R.</creator><creator>Blanchard, Philippe</creator><creator>Dinh, John</creator><creator>Gonzales, Nathan</creator><creator>Gopalakrishnan, Vasudevan</creator><creator>Guichet, Berenice</creator><creator>Hollmer, Shane</creator><creator>Hsu, Sue</creator><creator>Intrater, Gideon</creator><creator>Kamalanathan, Deepak</creator><creator>Kim, David</creator><creator>Koushan, Foroozan</creator><creator>Kwan, Ming</creator><creator>Lewis, Derric</creator><creator>Pedersen, Bård</creator><creator>Ramsbey, Mark</creator><creator>Runnion, Ed</creator><creator>Shields, Jeffrey</creator><creator>Tsai, Kevin</creator><creator>Tysdal, Aaron</creator><creator>Wang, Daniel</creator><creator>Gopinath, Venkatesh</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20160819</creationdate><title>(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow</title><author>Jameson, John R. ; Blanchard, Philippe ; Dinh, John ; Gonzales, Nathan ; Gopalakrishnan, Vasudevan ; Guichet, Berenice ; Hollmer, Shane ; Hsu, Sue ; Intrater, Gideon ; Kamalanathan, Deepak ; Kim, David ; Koushan, Foroozan ; Kwan, Ming ; Lewis, Derric ; Pedersen, Bård ; Ramsbey, Mark ; Runnion, Ed ; Shields, Jeffrey ; Tsai, Kevin ; Tysdal, Aaron ; Wang, Daniel ; Gopinath, Venkatesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c274t-3dfdd26e1e03b53e23cdbe25ebbfc114b628f59ce9915d7ac833dc2c3c5effee3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Jameson, John R.</creatorcontrib><creatorcontrib>Blanchard, Philippe</creatorcontrib><creatorcontrib>Dinh, John</creatorcontrib><creatorcontrib>Gonzales, Nathan</creatorcontrib><creatorcontrib>Gopalakrishnan, Vasudevan</creatorcontrib><creatorcontrib>Guichet, Berenice</creatorcontrib><creatorcontrib>Hollmer, Shane</creatorcontrib><creatorcontrib>Hsu, Sue</creatorcontrib><creatorcontrib>Intrater, Gideon</creatorcontrib><creatorcontrib>Kamalanathan, Deepak</creatorcontrib><creatorcontrib>Kim, David</creatorcontrib><creatorcontrib>Koushan, Foroozan</creatorcontrib><creatorcontrib>Kwan, Ming</creatorcontrib><creatorcontrib>Lewis, Derric</creatorcontrib><creatorcontrib>Pedersen, Bård</creatorcontrib><creatorcontrib>Ramsbey, Mark</creatorcontrib><creatorcontrib>Runnion, Ed</creatorcontrib><creatorcontrib>Shields, Jeffrey</creatorcontrib><creatorcontrib>Tsai, Kevin</creatorcontrib><creatorcontrib>Tysdal, Aaron</creatorcontrib><creatorcontrib>Wang, Daniel</creatorcontrib><creatorcontrib>Gopinath, Venkatesh</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jameson, John R.</au><au>Blanchard, Philippe</au><au>Dinh, John</au><au>Gonzales, Nathan</au><au>Gopalakrishnan, Vasudevan</au><au>Guichet, Berenice</au><au>Hollmer, Shane</au><au>Hsu, Sue</au><au>Intrater, Gideon</au><au>Kamalanathan, Deepak</au><au>Kim, David</au><au>Koushan, Foroozan</au><au>Kwan, Ming</au><au>Lewis, Derric</au><au>Pedersen, Bård</au><au>Ramsbey, Mark</au><au>Runnion, Ed</au><au>Shields, Jeffrey</au><au>Tsai, Kevin</au><au>Tysdal, Aaron</au><au>Wang, Daniel</au><au>Gopinath, Venkatesh</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow</atitle><btitle>ECS transactions</btitle><addtitle>ECS Trans</addtitle><date>2016-08-19</date><risdate>2016</risdate><volume>75</volume><issue>5</issue><spage>41</spage><epage>54</epage><pages>41-54</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today-subquantum CBRAM-and highlights similarities and differences between it and its predecessors. The materials requirements of subquantum CBRAM cells are described, and new insight into the switching mechanism is provided. Finally, its electrical characteristics are benchmarked, and its suitability for applications such as embedded memory, the Internet of Things (IoT), and radiation-tolerant electronics is summarized.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/07505.0041ecst</doi><tpages>14</tpages></addata></record>
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1938-6737
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title (Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T21%3A33%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=(Invited)%20Conductive%20Bridging%20RAM%20(CBRAM):%20Then,%20Now,%20and%20Tomorrow&rft.btitle=ECS%20transactions&rft.au=Jameson,%20John%20R.&rft.date=2016-08-19&rft.volume=75&rft.issue=5&rft.spage=41&rft.epage=54&rft.pages=41-54&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/07505.0041ecst&rft_dat=%3Ciop_cross%3E10.1149/07505.0041ecst%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true