On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
One of the main limitations based on point defects in AlN is related to the UV absorption band present at 265 nm. This relatively broad absorption band limits the use of bulk substrates within the deep UV range and several complicated fabrication procedures have been devised to overcome this limitat...
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| creator | Alden, Dorian Bryan, Zachary Gaddy, Benjamin Bryan, Isaac Callsen, Gordon Koukitu, Akinori Kumagai, Yoshinao Hoffmann, Axel Irving, Doug Sitar, Zlatko Collazo, Ramon |
| description | One of the main limitations based on point defects in AlN is related to the UV absorption band present at 265 nm. This relatively broad absorption band limits the use of bulk substrates within the deep UV range and several complicated fabrication procedures have been devised to overcome this limitation. The origin for this absorption band along with corresponding photoluminescence signatures will be reviewed. CN- and VN+ were identified as the point defects directly associated with the main absorption at 4.7 eV and the emission at 2.8 eV. The main absorption is due to a transition between the CN- state and conduction band, while the emission arises from a DAP transition between the donor VN+ and acceptor CN- through the 4.7 eV excitation channel. New observations based on photoluminescence excitation are presented to further support the assignments previously made. |
| doi_str_mv | 10.1149/07205.0031ecst |
| format | Conference Proceeding |
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This relatively broad absorption band limits the use of bulk substrates within the deep UV range and several complicated fabrication procedures have been devised to overcome this limitation. The origin for this absorption band along with corresponding photoluminescence signatures will be reviewed. CN- and VN+ were identified as the point defects directly associated with the main absorption at 4.7 eV and the emission at 2.8 eV. The main absorption is due to a transition between the CN- state and conduction band, while the emission arises from a DAP transition between the donor VN+ and acceptor CN- through the 4.7 eV excitation channel. 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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2016, Vol.72 (5), p.31-40 |
| issn | 1938-5862 1938-6737 |
| language | eng |
| recordid | cdi_iop_journals_10_1149_07205_0031ecst |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates |
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