(Invited) Technology Options to Reduce Contact Resistance in Nanoscale III-V MOSFETs

III-V semiconductors have emerged as the leading candidate to replace Si as the n-FET channel material for future low power logic applications. However, to realize the full performance benefits of III-V channels, it is crucial that external parasitic resistance (Rext) be minimized. Among the differe...

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Veröffentlicht in:	ECS transactions 2015-03, Vol.66 (4), p.125-134
Hauptverfasser:	Lee, Rinus T.P., Loh, Wei Yip, Tieckelmann, Robert, Orzali, Tommaso, Huffman, Craig, Vert, Alexey, Huang, Gensheng, Kelman, Maxim, Karim, Zia, Hobbs, Chris, Hill, Richard J.W., Papa Rao, S.S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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