(Invited) Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today´s and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in...

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Veröffentlicht in:	ECS transactions 2014-08, Vol.64 (8), p.159-168
Hauptverfasser:	Müller, Johannes, Polakowski, Patrick, Müller, Stefan, Mikolajick, Thomas
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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