(Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices

The formation of conductive filamentary structures characteristic to the "ON" state (or LRS - low resistance state) of the resistance based memory devices were studied using ab initio simulation techniques. The atomistic description of the rupturing/dissolution process into the "OFF&q...

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Hauptverfasser:	Magyari-Kope, Blanka, Zhao, Liang, Kamiya, Katsumasa, Yang, Moon Young, Niwa, Masaaki, Shiraishi, Kenji, Nishi, Yoshio
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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