Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range

Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range

Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax > 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reli...

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Veröffentlicht in:ECS transactions 2013-08, Vol.58 (4), p.33-47
Hauptverfasser: Tanimoto, Satoshi, Watanabe, Kinuyo, Tanisawa, Hidekazu, Matsui, Kohei, Sato, Shinji
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container_issue 4
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container_title ECS transactions
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creator Tanimoto, Satoshi
Watanabe, Kinuyo
Tanisawa, Hidekazu
Matsui, Kohei
Sato, Shinji
description Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax > 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reliability of the critical package components-die attachment system, Al wire bonds and encapsulation-in direct contact with SiC devices inside the power module. Two numerical targets, (I) 3000 hours for a storage test at 250°C and (II) 3000 cycles for thermal cycling between -40°C and 250°C, were achieved through optimization and various improvements.
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_1149_05804_0033ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/05804.0033ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-aedadb57b6a5fdfbb70399998479a71eeb3ef2b76523026da65ef406da674fe53</originalsourceid><addsrcrecordid>eNp1kE1PwzAMhiMEEmNw5ZwzUkfaNEl7RNX4kIY2sXKuksYZHV1SklbAv6dj44gvfiX7sawHoeuYzOI4zW8Jy0g6I4RSqEN_giZxTrOICypOj5llPDlHFyFsCeEjIyZovZL1u9w0doNLqN9s8zFAwMZ5XLhdJ-ser5sCr9wnePzs9NCO02UHXqoWcGOxtHj-1YPVoHG5xS_SbuASnRnZBrg69il6vZ-XxWO0WD48FXeLqKYp6SMJWmrFhOKSGW2UEoTmY2WpyKWIARQFkyjBWUJJwrXkDExK9kGkBhidotnhbu1dCB5M1flmJ_13FZNqr6T6VVL9KRmBmwPQuK7ausHb8b3_ln8AX7tikw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Tanimoto, Satoshi ; Watanabe, Kinuyo ; Tanisawa, Hidekazu ; Matsui, Kohei ; Sato, Shinji</creator><creatorcontrib>Tanimoto, Satoshi ; Watanabe, Kinuyo ; Tanisawa, Hidekazu ; Matsui, Kohei ; Sato, Shinji</creatorcontrib><description>Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax &gt; 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reliability of the critical package components-die attachment system, Al wire bonds and encapsulation-in direct contact with SiC devices inside the power module. Two numerical targets, (I) 3000 hours for a storage test at 250°C and (II) 3000 cycles for thermal cycling between -40°C and 250°C, were achieved through optimization and various improvements.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/05804.0033ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2013-08, Vol.58 (4), p.33-47</ispartof><rights>2013 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-aedadb57b6a5fdfbb70399998479a71eeb3ef2b76523026da65ef406da674fe53</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/05804.0033ecst/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,777,781,27905,27906,53827,53874</link.rule.ids></links><search><creatorcontrib>Tanimoto, Satoshi</creatorcontrib><creatorcontrib>Watanabe, Kinuyo</creatorcontrib><creatorcontrib>Tanisawa, Hidekazu</creatorcontrib><creatorcontrib>Matsui, Kohei</creatorcontrib><creatorcontrib>Sato, Shinji</creatorcontrib><title>Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax &gt; 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reliability of the critical package components-die attachment system, Al wire bonds and encapsulation-in direct contact with SiC devices inside the power module. Two numerical targets, (I) 3000 hours for a storage test at 250°C and (II) 3000 cycles for thermal cycling between -40°C and 250°C, were achieved through optimization and various improvements.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp1kE1PwzAMhiMEEmNw5ZwzUkfaNEl7RNX4kIY2sXKuksYZHV1SklbAv6dj44gvfiX7sawHoeuYzOI4zW8Jy0g6I4RSqEN_giZxTrOICypOj5llPDlHFyFsCeEjIyZovZL1u9w0doNLqN9s8zFAwMZ5XLhdJ-ser5sCr9wnePzs9NCO02UHXqoWcGOxtHj-1YPVoHG5xS_SbuASnRnZBrg69il6vZ-XxWO0WD48FXeLqKYp6SMJWmrFhOKSGW2UEoTmY2WpyKWIARQFkyjBWUJJwrXkDExK9kGkBhidotnhbu1dCB5M1flmJ_13FZNqr6T6VVL9KRmBmwPQuK7ausHb8b3_ln8AX7tikw</recordid><startdate>20130831</startdate><enddate>20130831</enddate><creator>Tanimoto, Satoshi</creator><creator>Watanabe, Kinuyo</creator><creator>Tanisawa, Hidekazu</creator><creator>Matsui, Kohei</creator><creator>Sato, Shinji</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130831</creationdate><title>Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range</title><author>Tanimoto, Satoshi ; Watanabe, Kinuyo ; Tanisawa, Hidekazu ; Matsui, Kohei ; Sato, Shinji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-aedadb57b6a5fdfbb70399998479a71eeb3ef2b76523026da65ef406da674fe53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Tanimoto, Satoshi</creatorcontrib><creatorcontrib>Watanabe, Kinuyo</creatorcontrib><creatorcontrib>Tanisawa, Hidekazu</creatorcontrib><creatorcontrib>Matsui, Kohei</creatorcontrib><creatorcontrib>Sato, Shinji</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanimoto, Satoshi</au><au>Watanabe, Kinuyo</au><au>Tanisawa, Hidekazu</au><au>Matsui, Kohei</au><au>Sato, Shinji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range</atitle><jtitle>ECS transactions</jtitle><addtitle>ECS Trans</addtitle><date>2013-08-31</date><risdate>2013</risdate><volume>58</volume><issue>4</issue><spage>33</spage><epage>47</epage><pages>33-47</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax &gt; 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reliability of the critical package components-die attachment system, Al wire bonds and encapsulation-in direct contact with SiC devices inside the power module. Two numerical targets, (I) 3000 hours for a storage test at 250°C and (II) 3000 cycles for thermal cycling between -40°C and 250°C, were achieved through optimization and various improvements.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/05804.0033ecst</doi><tpages>15</tpages></addata></record>
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title Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T20%3A32%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Packaging%20Techniques%20for%20Compact%20SiC%20Power%20Modules%20Operable%20in%20an%20Extended%20Tj%20Range&rft.jtitle=ECS%20transactions&rft.au=Tanimoto,%20Satoshi&rft.date=2013-08-31&rft.volume=58&rft.issue=4&rft.spage=33&rft.epage=47&rft.pages=33-47&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/05804.0033ecst&rft_dat=%3Ciop_cross%3E10.1149/05804.0033ecst%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true