(Invited) HfO2-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays

The Ti/HfO2/TiN-based system is a very promising candidate for Resistance change Random Access Memory (RRAM). By combining material science studies and integration in a Si CMOS technology, we succeeded to give quantitative insight in the resistive switching mechanism and to process a 4 kbit array wi...

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Bibliographische Detailangaben

Hauptverfasser:	Bertaud, Thomas, Walczyk, Damian, Sowinska, Malgorzata, Wolansky, Dirk, Tillack, Bernd, Schoof, Gunter, Stikanov, Valery, Wenger, Christian, Thiess, Sebastian, Schroeder, Thomas, Walczyk, Christian
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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