Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Conventional doping processes are no longer viable for realizing extreme structures, such as a δ -doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)- δ -doped layer based on surface nanostructures, i.e. Bi nanolines,...

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Veröffentlicht in:Nano futures 2021-12, Vol.5 (4), p.45005
Hauptverfasser: Murata, Koichi, Yagi, Shuhei, Kanazawa, Takashi, Tsubomatsu, Satoshi, Kirkham, Christopher, Nittoh, Koh-ichi, Bowler, David R, Miki, Kazushi
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doping
epitaxial growth
MBE
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container_issue 4
container_start_page 45005
container_title Nano futures
container_volume 5
creator Murata, Koichi
Yagi, Shuhei
Kanazawa, Takashi
Tsubomatsu, Satoshi
Kirkham, Christopher
Nittoh, Koh-ichi
Bowler, David R
Miki, Kazushi
description Conventional doping processes are no longer viable for realizing extreme structures, such as a δ -doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)- δ -doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ -doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.
doi_str_mv 10.1088/2399-1984/ac421d
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subjects doping
epitaxial growth
MBE
title Activation of two dopants, Bi and Er in δ-doped layer in Si crystal
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