Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition
Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic pr...
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| Veröffentlicht in: | Materials research express 2021-10, Vol.8 (10), p.106402 |
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| description | Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains. |
| doi_str_mv | 10.1088/2053-1591/ac2fcb |
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To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains.</description><identifier>ISSN: 2053-1591</identifier><identifier>EISSN: 2053-1591</identifier><identifier>DOI: 10.1088/2053-1591/ac2fcb</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Dioxides ; Hafnium compounds ; hafnium dioxide films ; Hafnium oxide ; hafnium(IV) acetylacetonate ; Infrared analysis ; Infrared spectroscopy ; Metalorganic chemical vapor deposition ; MOCVD ; Morphology ; Organic chemicals ; Organic chemistry ; Photoelectrons ; Precursors ; Spectrum analysis ; Substrates ; Thermal decomposition ; Thermal stability ; Thermogravimetric analysis ; Thin films ; Vaporization ; X ray photoelectron spectroscopy</subject><ispartof>Materials research express, 2021-10, Vol.8 (10), p.106402</ispartof><rights>2021 The Author(s). Published by IOP Publishing Ltd</rights><rights>2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3</cites><orcidid>0000-0002-5455-4397</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/2053-1591/ac2fcb/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,780,784,864,2100,27922,27923,38866,38888,53838,53865</link.rule.ids></links><search><creatorcontrib>Luo, Yuan</creatorcontrib><creatorcontrib>Hu, Jinquan</creatorcontrib><creatorcontrib>Hu, Changyi</creatorcontrib><creatorcontrib>Chang, Qiaowen</creatorcontrib><creatorcontrib>Zhao, Jun</creatorcontrib><creatorcontrib>Wei, Yan</creatorcontrib><creatorcontrib>Cai, Hongzhong</creatorcontrib><title>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</title><title>Materials research express</title><addtitle>MRX</addtitle><addtitle>Mater. Res. Express</addtitle><description>Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains.</description><subject>Dioxides</subject><subject>Hafnium compounds</subject><subject>hafnium dioxide films</subject><subject>Hafnium oxide</subject><subject>hafnium(IV) acetylacetonate</subject><subject>Infrared analysis</subject><subject>Infrared spectroscopy</subject><subject>Metalorganic chemical vapor deposition</subject><subject>MOCVD</subject><subject>Morphology</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Photoelectrons</subject><subject>Precursors</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thermal decomposition</subject><subject>Thermal stability</subject><subject>Thermogravimetric analysis</subject><subject>Thin films</subject><subject>Vaporization</subject><subject>X ray photoelectron spectroscopy</subject><issn>2053-1591</issn><issn>2053-1591</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>DOA</sourceid><recordid>eNp9UcFO3TAQjKoiFQF3jpZ66KUptuN1nGOFWoqEBAc4Wxt7zfNTEqdOHoW_J48g2kPFaVermdnRTFGcCv5NcGPOJIeqFNCIM3QyuPZDcfh2-vjP_qk4maYt51zWTQVSHxY3Fzn9mTcsBbbBMMRdz3xMj9ETmzdxYCF2_cQeIrKeZuzKlO9xiI65DfXRYccecEyZeRrTFOeYhuPiIGA30cnrPCrufv64Pf9VXl1fXJ5_vyqd4mIuVYtGUeWg1p5LBKrQ6xobI0Bp7sCTb1qlOLgG0COACIh1INXWREL76qi4XHV9wq0dc-wxP9mE0b4cFp8W8xxdR1b7wD0ETcBBQaVaaVohqTXK1KS1WbQ-r1pjTr93NM12m3Z5WOxbCQYakLKCBcVXlMtpmjKFt6-C230Ndp-z3eds1xoWyteVEtP4V_Md-Jf_wPv8aM1K0opLO_pQPQPUHpaR</recordid><startdate>20211001</startdate><enddate>20211001</enddate><creator>Luo, Yuan</creator><creator>Hu, Jinquan</creator><creator>Hu, Changyi</creator><creator>Chang, Qiaowen</creator><creator>Zhao, Jun</creator><creator>Wei, Yan</creator><creator>Cai, Hongzhong</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-5455-4397</orcidid></search><sort><creationdate>20211001</creationdate><title>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</title><author>Luo, Yuan ; Hu, Jinquan ; Hu, Changyi ; Chang, Qiaowen ; Zhao, Jun ; Wei, Yan ; Cai, Hongzhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Dioxides</topic><topic>Hafnium compounds</topic><topic>hafnium dioxide films</topic><topic>Hafnium oxide</topic><topic>hafnium(IV) acetylacetonate</topic><topic>Infrared analysis</topic><topic>Infrared spectroscopy</topic><topic>Metalorganic chemical vapor deposition</topic><topic>MOCVD</topic><topic>Morphology</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Photoelectrons</topic><topic>Precursors</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thermal decomposition</topic><topic>Thermal stability</topic><topic>Thermogravimetric analysis</topic><topic>Thin films</topic><topic>Vaporization</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Yuan</creatorcontrib><creatorcontrib>Hu, Jinquan</creatorcontrib><creatorcontrib>Hu, Changyi</creatorcontrib><creatorcontrib>Chang, Qiaowen</creatorcontrib><creatorcontrib>Zhao, Jun</creatorcontrib><creatorcontrib>Wei, Yan</creatorcontrib><creatorcontrib>Cai, Hongzhong</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Materials research express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Yuan</au><au>Hu, Jinquan</au><au>Hu, Changyi</au><au>Chang, Qiaowen</au><au>Zhao, Jun</au><au>Wei, Yan</au><au>Cai, Hongzhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</atitle><jtitle>Materials research express</jtitle><stitle>MRX</stitle><addtitle>Mater. Res. Express</addtitle><date>2021-10-01</date><risdate>2021</risdate><volume>8</volume><issue>10</issue><spage>106402</spage><pages>106402-</pages><issn>2053-1591</issn><eissn>2053-1591</eissn><abstract>Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/2053-1591/ac2fcb</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5455-4397</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Dioxides Hafnium compounds hafnium dioxide films Hafnium oxide hafnium(IV) acetylacetonate Infrared analysis Infrared spectroscopy Metalorganic chemical vapor deposition MOCVD Morphology Organic chemicals Organic chemistry Photoelectrons Precursors Spectrum analysis Substrates Thermal decomposition Thermal stability Thermogravimetric analysis Thin films Vaporization X ray photoelectron spectroscopy |
| title | Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition |
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