Control of magnetization dynamics by substrate orientation in YIG thin films

Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi 0.1 Y 2.9 Fe 5 O 12 , BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film...

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Veröffentlicht in:Materials research express 2021-06, Vol.8 (6), p.66401
Hauptverfasser: Gurjar, Ganesh, Sharma, Vinay, Patnaik, S, Kuanr, Bijoy K
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description Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi 0.1 Y 2.9 Fe 5 O 12 , BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 Å to 12.401 Å due to orientation dependent distribution of Bi 3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert damping which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert damping are found to be (0.54 ± 0.06) × 10 −4 , for YIG (100) and (6.27 ± 0.33) × 10 −4 , for Bi-YIG (111) oriented films. Angle variation ( ϕ ) measurements of the H r are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4 π M eff ) and extrinsic linewidth (ΔH 0 ) are observed to be dependent on substrate orientation. Hence PLD growth can assist single-crystalline YIG and BYG films with a perfect interface that can be used for spintronics and related device applications.
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As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 Å to 12.401 Å due to orientation dependent distribution of Bi 3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert damping which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert damping are found to be (0.54 ± 0.06) × 10 −4 , for YIG (100) and (6.27 ± 0.33) × 10 −4 , for Bi-YIG (111) oriented films. Angle variation ( ϕ ) measurements of the H r are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4 π M eff ) and extrinsic linewidth (ΔH 0 ) are observed to be dependent on substrate orientation. 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Res. Express</addtitle><date>2021-06-01</date><risdate>2021</risdate><volume>8</volume><issue>6</issue><spage>66401</spage><pages>66401-</pages><issn>2053-1591</issn><eissn>2053-1591</eissn><abstract>Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi 0.1 Y 2.9 Fe 5 O 12 , BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 Å to 12.401 Å due to orientation dependent distribution of Bi 3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert damping which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert damping are found to be (0.54 ± 0.06) × 10 −4 , for YIG (100) and (6.27 ± 0.33) × 10 −4 , for Bi-YIG (111) oriented films. Angle variation ( ϕ ) measurements of the H r are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4 π M eff ) and extrinsic linewidth (ΔH 0 ) are observed to be dependent on substrate orientation. Hence PLD growth can assist single-crystalline YIG and BYG films with a perfect interface that can be used for spintronics and related device applications.</abstract><pub>IOP Publishing</pub><doi>10.1088/2053-1591/ac0311</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-4984-9243</orcidid><oa>free_for_read</oa></addata></record>
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subjects epitaxial YIG thin films
ferromagnetic resonance
Gilbert damping
inhomogeneous broadening
lattice strain
pulse laser deposition
title Control of magnetization dynamics by substrate orientation in YIG thin films
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