Influence of precursor concentration on the optoelectronic properties of spray deposited SnO2/Si heterojunction

Nanostructure SnO2/Si heterojunction were successfully prepared by spray pyrolysis technique at temperature 350 °C. Effect of precursor concentration on structural, optical and optoelectronic properties has been investigated. It is shown that the SnO2 thin films properties depend strongly on the pre...

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Veröffentlicht in:	Materials research express 2019-08, Vol.6 (9)
Hauptverfasser:	Hassan, Azhar I, Addie, Ali J, Admon, Jehan
Format:	Artikel
Sprache:	eng
Schlagworte:	heterojunction nanostructure SnO spray pyrolysis thin film
Online-Zugang:	Volltext
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