High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers
Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 °C without visible degradation. The QD structure is designed by applying the Stranski–Krastanow growth mode in solid source molecular beam epitaxy. The de...
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| Veröffentlicht in: | Chinese physics B 2023-09, Vol.32 (9), p.98103-585 |
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| creator | Su, Xiang-Bin Shao, Fu-Hui Hao, Hui-Ming Qing, Liu-Han Li, Shu-Lun Dai, De-Yan Shang, Xiang-Jun Wang, Tian-Fang Zhang, Yu Yang, Cheng-Ao Xu, Ying-Qiang Ni, Hai-Qiao Ding, Ying Niu, Zhi-Chuan |
| description | Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 °C without visible degradation. The QD structure is designed by applying the Stranski–Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8 × 10
10
cm
−2
to 5.9 × 10
10
cm
−2
. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 °C. |
| doi_str_mv | 10.1088/1674-1056/acb491 |
| format | Article |
| fullrecord | <record><control><sourceid>wanfang_jour_iop_j</sourceid><recordid>TN_cdi_iop_journals_10_1088_1674_1056_acb491</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><wanfj_id>zgwl_e202309071</wanfj_id><sourcerecordid>zgwl_e202309071</sourcerecordid><originalsourceid>FETCH-LOGICAL-c297t-f73a420d72f6a56dabcb20f5ff3a45d27cfa7600e8366ebfd910433422c3675f3</originalsourceid><addsrcrecordid>eNp9kDFPwzAQhT2ARCnsjN66EHq2EzsZqwpopUpICGbLceySqrGDnVDBryclCBbEdNK7997pPoSuCNwQyPM54SJNCGR8rnSZFuQETX6kM3Qe4w6AE6Bsgh5X9fYl6UzTmqC6Phisvetq1_s-Jgf1ZrD_2tTeYW8xYQSwa_DaLeL8Xi0ifu2V6_oGV77DexVNiBfo1Kp9NJffc4qe726flqtk83C_Xi42iaaF6BIrmEopVIJarjJeqVKXFGxm7aBnFRXaKsEBTM44N6WtCgIpYymlmnGRWTZFs7H3oJxVbit3vg9uuCg_toe9NHR4EAoQZHDC6NTBxxiMlW2oGxXeJQF5JCaPeOQRjxyJDZHrMVL79rf4H_vsD7tuS8moLCQUOQEm28qyT4-ze0Y</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers</title><source>Institute of Physics Journals</source><creator>Su, Xiang-Bin ; Shao, Fu-Hui ; Hao, Hui-Ming ; Qing, Liu-Han ; Li, Shu-Lun ; Dai, De-Yan ; Shang, Xiang-Jun ; Wang, Tian-Fang ; Zhang, Yu ; Yang, Cheng-Ao ; Xu, Ying-Qiang ; Ni, Hai-Qiao ; Ding, Ying ; Niu, Zhi-Chuan</creator><creatorcontrib>Su, Xiang-Bin ; Shao, Fu-Hui ; Hao, Hui-Ming ; Qing, Liu-Han ; Li, Shu-Lun ; Dai, De-Yan ; Shang, Xiang-Jun ; Wang, Tian-Fang ; Zhang, Yu ; Yang, Cheng-Ao ; Xu, Ying-Qiang ; Ni, Hai-Qiao ; Ding, Ying ; Niu, Zhi-Chuan</creatorcontrib><description>Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 °C without visible degradation. The QD structure is designed by applying the Stranski–Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8 × 10
10
cm
−2
to 5.9 × 10
10
cm
−2
. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 °C.</description><identifier>ISSN: 1674-1056</identifier><identifier>DOI: 10.1088/1674-1056/acb491</identifier><language>eng</language><publisher>Chinese Physical Society and IOP Publishing Ltd</publisher><subject>high-operating-temperature laser ; InAs/GaAs quantum dots ; molecular beam epitaxy (MBE)</subject><ispartof>Chinese physics B, 2023-09, Vol.32 (9), p.98103-585</ispartof><rights>2023 Chinese Physical Society and IOP Publishing Ltd</rights><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c297t-f73a420d72f6a56dabcb20f5ff3a45d27cfa7600e8366ebfd910433422c3675f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.wanfangdata.com.cn/images/PeriodicalImages/zgwl-e/zgwl-e.jpg</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1674-1056/acb491/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821</link.rule.ids></links><search><creatorcontrib>Su, Xiang-Bin</creatorcontrib><creatorcontrib>Shao, Fu-Hui</creatorcontrib><creatorcontrib>Hao, Hui-Ming</creatorcontrib><creatorcontrib>Qing, Liu-Han</creatorcontrib><creatorcontrib>Li, Shu-Lun</creatorcontrib><creatorcontrib>Dai, De-Yan</creatorcontrib><creatorcontrib>Shang, Xiang-Jun</creatorcontrib><creatorcontrib>Wang, Tian-Fang</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Yang, Cheng-Ao</creatorcontrib><creatorcontrib>Xu, Ying-Qiang</creatorcontrib><creatorcontrib>Ni, Hai-Qiao</creatorcontrib><creatorcontrib>Ding, Ying</creatorcontrib><creatorcontrib>Niu, Zhi-Chuan</creatorcontrib><title>High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers</title><title>Chinese physics B</title><addtitle>Chin. Phys. B</addtitle><description>Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 °C without visible degradation. The QD structure is designed by applying the Stranski–Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8 × 10
10
cm
−2
to 5.9 × 10
10
cm
−2
. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 °C.</description><subject>high-operating-temperature laser</subject><subject>InAs/GaAs quantum dots</subject><subject>molecular beam epitaxy (MBE)</subject><issn>1674-1056</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kDFPwzAQhT2ARCnsjN66EHq2EzsZqwpopUpICGbLceySqrGDnVDBryclCBbEdNK7997pPoSuCNwQyPM54SJNCGR8rnSZFuQETX6kM3Qe4w6AE6Bsgh5X9fYl6UzTmqC6Phisvetq1_s-Jgf1ZrD_2tTeYW8xYQSwa_DaLeL8Xi0ifu2V6_oGV77DexVNiBfo1Kp9NJffc4qe726flqtk83C_Xi42iaaF6BIrmEopVIJarjJeqVKXFGxm7aBnFRXaKsEBTM44N6WtCgIpYymlmnGRWTZFs7H3oJxVbit3vg9uuCg_toe9NHR4EAoQZHDC6NTBxxiMlW2oGxXeJQF5JCaPeOQRjxyJDZHrMVL79rf4H_vsD7tuS8moLCQUOQEm28qyT4-ze0Y</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Su, Xiang-Bin</creator><creator>Shao, Fu-Hui</creator><creator>Hao, Hui-Ming</creator><creator>Qing, Liu-Han</creator><creator>Li, Shu-Lun</creator><creator>Dai, De-Yan</creator><creator>Shang, Xiang-Jun</creator><creator>Wang, Tian-Fang</creator><creator>Zhang, Yu</creator><creator>Yang, Cheng-Ao</creator><creator>Xu, Ying-Qiang</creator><creator>Ni, Hai-Qiao</creator><creator>Ding, Ying</creator><creator>Niu, Zhi-Chuan</creator><general>Chinese Physical Society and IOP Publishing Ltd</general><general>Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China</general><general>State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China</general><general>Beijing Academy of Quantum Information Sciences,Beijing 100193,China%James Watt School of Engineering,University of Glasgow,Glasgow,G12 8LT,UK</general><scope>AAYXX</scope><scope>CITATION</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20230901</creationdate><title>High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers</title><author>Su, Xiang-Bin ; Shao, Fu-Hui ; Hao, Hui-Ming ; Qing, Liu-Han ; Li, Shu-Lun ; Dai, De-Yan ; Shang, Xiang-Jun ; Wang, Tian-Fang ; Zhang, Yu ; Yang, Cheng-Ao ; Xu, Ying-Qiang ; Ni, Hai-Qiao ; Ding, Ying ; Niu, Zhi-Chuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c297t-f73a420d72f6a56dabcb20f5ff3a45d27cfa7600e8366ebfd910433422c3675f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>high-operating-temperature laser</topic><topic>InAs/GaAs quantum dots</topic><topic>molecular beam epitaxy (MBE)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Su, Xiang-Bin</creatorcontrib><creatorcontrib>Shao, Fu-Hui</creatorcontrib><creatorcontrib>Hao, Hui-Ming</creatorcontrib><creatorcontrib>Qing, Liu-Han</creatorcontrib><creatorcontrib>Li, Shu-Lun</creatorcontrib><creatorcontrib>Dai, De-Yan</creatorcontrib><creatorcontrib>Shang, Xiang-Jun</creatorcontrib><creatorcontrib>Wang, Tian-Fang</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Yang, Cheng-Ao</creatorcontrib><creatorcontrib>Xu, Ying-Qiang</creatorcontrib><creatorcontrib>Ni, Hai-Qiao</creatorcontrib><creatorcontrib>Ding, Ying</creatorcontrib><creatorcontrib>Niu, Zhi-Chuan</creatorcontrib><collection>CrossRef</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Su, Xiang-Bin</au><au>Shao, Fu-Hui</au><au>Hao, Hui-Ming</au><au>Qing, Liu-Han</au><au>Li, Shu-Lun</au><au>Dai, De-Yan</au><au>Shang, Xiang-Jun</au><au>Wang, Tian-Fang</au><au>Zhang, Yu</au><au>Yang, Cheng-Ao</au><au>Xu, Ying-Qiang</au><au>Ni, Hai-Qiao</au><au>Ding, Ying</au><au>Niu, Zhi-Chuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chin. Phys. B</addtitle><date>2023-09-01</date><risdate>2023</risdate><volume>32</volume><issue>9</issue><spage>98103</spage><epage>585</epage><pages>98103-585</pages><issn>1674-1056</issn><abstract>Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 °C without visible degradation. The QD structure is designed by applying the Stranski–Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8 × 10
10
cm
−2
to 5.9 × 10
10
cm
−2
. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 °C.</abstract><pub>Chinese Physical Society and IOP Publishing Ltd</pub><doi>10.1088/1674-1056/acb491</doi><tpages>4</tpages></addata></record> |
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| source | Institute of Physics Journals |
| subjects | high-operating-temperature laser InAs/GaAs quantum dots molecular beam epitaxy (MBE) |
| title | High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers |
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