Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physica scripta 2024-12, Vol.99 (12)
Hauptverfasser:	Zhao, Xiaojian, Yan, Peipei, Liang, Yan, Li, Guijin, Zhou, Xilin, Xiao, Youpeng
Format:	Artikel
Sprache:	eng
Schlagworte:	band offset GeSe simulation solar cell
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	12
container_start_page
container_title	Physica scripta
container_volume	99
creator	Zhao, Xiaojian Yan, Peipei Liang, Yan Li, Guijin Zhou, Xilin Xiao, Youpeng
description
doi_str_mv	10.1088/1402-4896/ad917f
format	Article
fullrecord	<record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1088_1402_4896_ad917f</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>psad917f</sourcerecordid><originalsourceid>FETCH-LOGICAL-i154t-af3d978b37de02304489af4c313764410b7ff7eb4ded20768b74812bfba13ab3</originalsourceid><addsrcrecordid>eNptkM1LAzEQxYMoWKt3j7l5cW2-ukm8SalVKHhobx7CpEl0S7pZkl3Q_94tFU_CwIPhvZnHD6FbSh4oUWpGBWGVULqegdNUhjM0-VudowkhnFZKC32JrkrZE8JqVusJel9-dTHlpv3AG8s2HEPBgD9T9LjP0JYu5R5H-PYZh5Txym88tlC8wyVFyHjnY3wcE-1w8LnZQcSlOQwR-ia11-giQCz-5lenaPu83C5eqvXb6nXxtK4aOhd9BYE7LZXl0nnCOBFjZQhixymXtRCUWBmC9FY47xiRtbJSKMpssEA5WD5Fd6ezTerMPg25HZ-ZrhitDWXjzHWtTOfC6Lz_x0mJORI0R1zmiMucCPIfbcxjUw</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Zhao, Xiaojian ; Yan, Peipei ; Liang, Yan ; Li, Guijin ; Zhou, Xilin ; Xiao, Youpeng</creator><creatorcontrib>Zhao, Xiaojian ; Yan, Peipei ; Liang, Yan ; Li, Guijin ; Zhou, Xilin ; Xiao, Youpeng</creatorcontrib><identifier>ISSN: 0031-8949</identifier><identifier>EISSN: 1402-4896</identifier><identifier>DOI: 10.1088/1402-4896/ad917f</identifier><identifier>CODEN: PHSTBO</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>band offset ; GeSe ; simulation ; solar cell</subject><ispartof>Physica scripta, 2024-12, Vol.99 (12)</ispartof><rights>2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-2338-7928</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1402-4896/ad917f/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,27929,27930,53851,53898</link.rule.ids></links><search><creatorcontrib>Zhao, Xiaojian</creatorcontrib><creatorcontrib>Yan, Peipei</creatorcontrib><creatorcontrib>Liang, Yan</creatorcontrib><creatorcontrib>Li, Guijin</creatorcontrib><creatorcontrib>Zhou, Xilin</creatorcontrib><creatorcontrib>Xiao, Youpeng</creatorcontrib><title>Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation</title><title>Physica scripta</title><addtitle>PS</addtitle><addtitle>Phys. Scr</addtitle><subject>band offset</subject><subject>GeSe</subject><subject>simulation</subject><subject>solar cell</subject><issn>0031-8949</issn><issn>1402-4896</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNptkM1LAzEQxYMoWKt3j7l5cW2-ukm8SalVKHhobx7CpEl0S7pZkl3Q_94tFU_CwIPhvZnHD6FbSh4oUWpGBWGVULqegdNUhjM0-VudowkhnFZKC32JrkrZE8JqVusJel9-dTHlpv3AG8s2HEPBgD9T9LjP0JYu5R5H-PYZh5Txym88tlC8wyVFyHjnY3wcE-1w8LnZQcSlOQwR-ia11-giQCz-5lenaPu83C5eqvXb6nXxtK4aOhd9BYE7LZXl0nnCOBFjZQhixymXtRCUWBmC9FY47xiRtbJSKMpssEA5WD5Fd6ezTerMPg25HZ-ZrhitDWXjzHWtTOfC6Lz_x0mJORI0R1zmiMucCPIfbcxjUw</recordid><startdate>20241201</startdate><enddate>20241201</enddate><creator>Zhao, Xiaojian</creator><creator>Yan, Peipei</creator><creator>Liang, Yan</creator><creator>Li, Guijin</creator><creator>Zhou, Xilin</creator><creator>Xiao, Youpeng</creator><general>IOP Publishing</general><scope/><orcidid>https://orcid.org/0000-0002-2338-7928</orcidid></search><sort><creationdate>20241201</creationdate><title>Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation</title><author>Zhao, Xiaojian ; Yan, Peipei ; Liang, Yan ; Li, Guijin ; Zhou, Xilin ; Xiao, Youpeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i154t-af3d978b37de02304489af4c313764410b7ff7eb4ded20768b74812bfba13ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>band offset</topic><topic>GeSe</topic><topic>simulation</topic><topic>solar cell</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Xiaojian</creatorcontrib><creatorcontrib>Yan, Peipei</creatorcontrib><creatorcontrib>Liang, Yan</creatorcontrib><creatorcontrib>Li, Guijin</creatorcontrib><creatorcontrib>Zhou, Xilin</creatorcontrib><creatorcontrib>Xiao, Youpeng</creatorcontrib><jtitle>Physica scripta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Xiaojian</au><au>Yan, Peipei</au><au>Liang, Yan</au><au>Li, Guijin</au><au>Zhou, Xilin</au><au>Xiao, Youpeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation</atitle><jtitle>Physica scripta</jtitle><stitle>PS</stitle><addtitle>Phys. Scr</addtitle><date>2024-12-01</date><risdate>2024</risdate><volume>99</volume><issue>12</issue><issn>0031-8949</issn><eissn>1402-4896</eissn><coden>PHSTBO</coden><pub>IOP Publishing</pub><doi>10.1088/1402-4896/ad917f</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-2338-7928</orcidid></addata></record>
fulltext	fulltext
identifier	ISSN: 0031-8949
ispartof	Physica scripta, 2024-12, Vol.99 (12)
issn	0031-8949 1402-4896
language	eng
recordid	cdi_iop_journals_10_1088_1402_4896_ad917f
source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	band offset GeSe simulation solar cell
title	Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T00%3A00%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Exploring%20Sb2S3%20as%20a%20hole%20transport%20layer%20for%20GeSe%20based%20solar%20cell:%20a%20numerical%20simulation&rft.jtitle=Physica%20scripta&rft.au=Zhao,%20Xiaojian&rft.date=2024-12-01&rft.volume=99&rft.issue=12&rft.issn=0031-8949&rft.eissn=1402-4896&rft.coden=PHSTBO&rft_id=info:doi/10.1088/1402-4896/ad917f&rft_dat=%3Ciop%3Epsad917f%3C/iop%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true