Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor

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Veröffentlicht in:	Semiconductor science and technology 2024-10, Vol.39 (10)
Hauptverfasser:	Li, Hongbo, Zhang, Jian, Guo, Chongyong, Liu, Yuanya, Liu, Chunyan, Wang, Yu, Li, Jianjun, Yuan, Hui, Jin, Xingcheng
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Sprache:	eng
Schlagworte:	atomic layer deposition capacitor TiN electrode
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doi_str_mv	10.1088/1361-6641/ad7637
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subjects	atomic layer deposition capacitor TiN electrode
title	Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor
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