Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Al doped α -GaOOH nanorod arrays were grown on FTO via hydrothermal processes by using gallium nitrate and aluminum nitrate mixed aqueous solutions with fixed 1:1 mole ratio as precursors. With increasing the gallium nitrate precursor concentrations, the Ga/Al atom ratios in nanorod arrays increase from 0.36 to 2.08, and the length becomes much longer from 650 nm to 1.04 μ m. According to the binding energy difference between Ga 2p 3/2 core level and its background in x-ray photoelectron spectroscopy, the bandgap is estimated to be around 5.3 ± 0.2 eV. Al doped α -GaOOH nanorod array/FTO photoelectrochemical photodetectors show enhanced self-powered solar-blind UV photodetection properties, with the decrease of Ga precursor concentrations. The maximum responsivity at 255 nm is 0.09 mA W −1 , and the fastest response time can reach 0.05 s. The improved photoresponse speed is ascribed from much shorter transportation route, accelerated carrier recombination by recombination centers, and smaller charge transfer resistance at the α -GaOOH/electrolyte interface with decreasing the gallium nitrate precursor concentrations. The stability and responsivity should be further improved. Nevertheless, this work firstly demonstrates the realization of self-powered solar-blind UV photodetection for α -GaOOH nanorod arrays on FTO via Al doping.