α-In2Se3/Nb-doped MoSh2 heterojunction: a first-principles study

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Veröffentlicht in:	Semiconductor science and technology 2024-01, Vol.39 (1)
Hauptverfasser:	Lv, Xiurui, Liu, Guipeng, Mao, Bangyao, Huang, Heyuan, Zhao, Guijuan, Yang, Jianhong
Format:	Artikel
Sprache:	eng
Schlagworte:	band alignment first principle calculations heterojunction In Nb-doped MoS
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subjects	band alignment first principle calculations heterojunction In Nb-doped MoS
title	α-In2Se3/Nb-doped MoSh2 heterojunction: a first-principles study
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