Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy

Preparing high quality non-polar aluminum nitride (AlN) templates is the key to improving the performance of non-polar deep-ultraviolet light-emitting diodes. In this study, we investigated the effect of buffer layer on the crystallinity and surface morphology of a -plane AlN films regrown by pulsed...

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Veröffentlicht in:	Semiconductor science and technology 2023-06, Vol.38 (6), p.64002
Hauptverfasser:	Cai, Tingsong, Guo, Yanan, Liu, Zhibin, Zhang, Ruijie, Wang, Dadi, Liu, Naixin, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi, Yan, Jianchang
Format:	Artikel
Sprache:	eng
Schlagworte:	buffer layer high-temperature annealing metal-organic vapor phase epitaxy plane AlN
Online-Zugang:	Volltext
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