Strain engineering in optoelectronic properties of MoSi2N4 monolayer: ultrahigh tunability
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| Veröffentlicht in: | Semiconductor science and technology 2022-06, Vol.37 (6) |
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| container_title | Semiconductor science and technology |
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| creator | Alavi-Rad, Hosein |
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| doi_str_mv | 10.1088/1361-6641/ac6769 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | Semiconductor science and technology, 2022-06, Vol.37 (6) |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_iop_journals_10_1088_1361_6641_ac6769 |
| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| subjects | 2D materials density functional theory electronic properties mechanical strain optical properties |
| title | Strain engineering in optoelectronic properties of MoSi2N4 monolayer: ultrahigh tunability |
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