Observation of trap-related phenomena in electrical performance of back-gated MoS2 field-effect transistors

Trap-related phenomena in the electrical performance of back-gated mechanical exfoliated MoS2 field-effect transistors are investigated in terms of the super linear increase in the drain current under positive gate bias and the shift of transfer curves with gate voltage stress. The super linear incr...

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Veröffentlicht in:	Semiconductor science and technology 2020-08, Vol.35 (9)
Hauptverfasser:	Mao, Yichen, Chang, Ailing, Xu, Pengpeng, Yu, Chunyu, Huang, Wei, Chen, Songyan, Wu, Zhengyun, Li, Cheng
Format:	Artikel
Sprache:	eng
Schlagworte:	defect traps field effect transistors hysteresis MoS
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