Influence of device architecture on the performance of negative capacitance MFMIS transistors

We report a comparative analysis of the performance of negative capacitance field-effect transistors (NCFETs) with single gate, double gate, tri-gate (FinFET) and gate-all-around (GAA) device architectures, using TCAD simulations. Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure i...

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Veröffentlicht in:	Semiconductor science and technology 2020-02, Vol.35 (2), p.25005, Article 025005
Hauptverfasser:	Sakib, Fahimul Islam, Mullick, Faiyaz Elahi, Shahnewaz, Shafat, Islam, Sharnali, Hossain, Mainul
Format:	Artikel
Sprache:	eng
Schlagworte:	capacitance matching device architecture Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary NCFET negative capacitance Physical Sciences Physics Physics, Condensed Matter Science & Technology TCAD Technology
Online-Zugang:	Volltext
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