An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory

An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory

An effective post etch treatment (PET) process was proposed to eliminate etch damage in the channel hole, of which the depth and the aspect ratio is beyond 3 m and 30:1 respectively, prior to selective epitaxial growth (SEG) in three dimensions (3D) NAND flash memory. In this work, it is demonstrate...

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Veröffentlicht in:Semiconductor science and technology 2019-09, Vol.34 (9), p.95004
Hauptverfasser: Luo, Liuyang, Lu, Zhiyong, Zou, Xingqi, Zhang, Yu, Zhang, Bao, Zhao, Chenglin, Zhao, Zhiguo, Li, Chunlong, Huo, Zongliang
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damage remove
plasma treatment
selective epitaxial growth
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container_end_page
container_issue 9
container_start_page 95004
container_title Semiconductor science and technology
container_volume 34
creator Luo, Liuyang
Lu, Zhiyong
Zou, Xingqi
Zhang, Yu
Zhang, Bao
Zhao, Chenglin
Zhao, Zhiguo
Li, Chunlong
Huo, Zongliang
description An effective post etch treatment (PET) process was proposed to eliminate etch damage in the channel hole, of which the depth and the aspect ratio is beyond 3 m and 30:1 respectively, prior to selective epitaxial growth (SEG) in three dimensions (3D) NAND flash memory. In this work, it is demonstrated that the damaged layer both at the channel hole bottom and sidewall induced by capacitively coupled plasma (CCP) was effectively eliminated using low energy plasma of CL2 + NF3/CH2F2 in PET, and then obtaining an excellent surface condition in channel hole and fabricating a void-free SEG epitaxial layer.
doi_str_mv 10.1088/1361-6641/ab3130
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_1088_1361_6641_ab3130</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>sstab3130</sourcerecordid><originalsourceid>FETCH-LOGICAL-c312t-cc62c29cf79932d249f31754d8533d329cec357302dcc5073800868f33e081ae3</originalsourceid><addsrcrecordid>eNp9kDlPwzAUxy0EEqWwM3pjIfTZL4czVi2XVJUFZss4dpsqqSPbHP32JErFhJie9L_09CPkmsEdAyFmDHOW5HnKZuodGcIJmfxKp2QCPBcJ4yk_Jxch7AAYEwgTYud7aqw1OtafhnbeaRMCjY5607peMVFvaaVatRnc2vnBC6Y5FkxXR_Vdq4ZuvPuKW1rvKS7per5eUtuosKVtv-MPl-TMqiaYq-OdkreH-9fFU7J6eXxezFeJRsZjonXONS-1LcoSecXT0iIrsrQSGWKFvWM0ZgUCr7TOoEABIHJhEQ0IpgxOCYy72rsQvLGyf7pV_iAZyIGTHKDIAYocOfWV27FSu07u3Iff9w_-F7_5Ix5ClJjKUkKZAaSyqyz-ACfWdXg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Luo, Liuyang ; Lu, Zhiyong ; Zou, Xingqi ; Zhang, Yu ; Zhang, Bao ; Zhao, Chenglin ; Zhao, Zhiguo ; Li, Chunlong ; Huo, Zongliang</creator><creatorcontrib>Luo, Liuyang ; Lu, Zhiyong ; Zou, Xingqi ; Zhang, Yu ; Zhang, Bao ; Zhao, Chenglin ; Zhao, Zhiguo ; Li, Chunlong ; Huo, Zongliang</creatorcontrib><description>An effective post etch treatment (PET) process was proposed to eliminate etch damage in the channel hole, of which the depth and the aspect ratio is beyond 3 m and 30:1 respectively, prior to selective epitaxial growth (SEG) in three dimensions (3D) NAND flash memory. In this work, it is demonstrated that the damaged layer both at the channel hole bottom and sidewall induced by capacitively coupled plasma (CCP) was effectively eliminated using low energy plasma of CL2 + NF3/CH2F2 in PET, and then obtaining an excellent surface condition in channel hole and fabricating a void-free SEG epitaxial layer.</description><identifier>ISSN: 0268-1242</identifier><identifier>EISSN: 1361-6641</identifier><identifier>DOI: 10.1088/1361-6641/ab3130</identifier><identifier>CODEN: SSTEET</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>damage remove ; plasma treatment ; selective epitaxial growth</subject><ispartof>Semiconductor science and technology, 2019-09, Vol.34 (9), p.95004</ispartof><rights>2019 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-cc62c29cf79932d249f31754d8533d329cec357302dcc5073800868f33e081ae3</citedby><cites>FETCH-LOGICAL-c312t-cc62c29cf79932d249f31754d8533d329cec357302dcc5073800868f33e081ae3</cites><orcidid>0000-0002-3434-8633 ; 0000-0002-9843-6341 ; 0000-0001-7029-396X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6641/ab3130/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Luo, Liuyang</creatorcontrib><creatorcontrib>Lu, Zhiyong</creatorcontrib><creatorcontrib>Zou, Xingqi</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Zhang, Bao</creatorcontrib><creatorcontrib>Zhao, Chenglin</creatorcontrib><creatorcontrib>Zhao, Zhiguo</creatorcontrib><creatorcontrib>Li, Chunlong</creatorcontrib><creatorcontrib>Huo, Zongliang</creatorcontrib><title>An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory</title><title>Semiconductor science and technology</title><addtitle>SST</addtitle><addtitle>Semicond. Sci. Technol</addtitle><description>An effective post etch treatment (PET) process was proposed to eliminate etch damage in the channel hole, of which the depth and the aspect ratio is beyond 3 m and 30:1 respectively, prior to selective epitaxial growth (SEG) in three dimensions (3D) NAND flash memory. In this work, it is demonstrated that the damaged layer both at the channel hole bottom and sidewall induced by capacitively coupled plasma (CCP) was effectively eliminated using low energy plasma of CL2 + NF3/CH2F2 in PET, and then obtaining an excellent surface condition in channel hole and fabricating a void-free SEG epitaxial layer.</description><subject>damage remove</subject><subject>plasma treatment</subject><subject>selective epitaxial growth</subject><issn>0268-1242</issn><issn>1361-6641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kDlPwzAUxy0EEqWwM3pjIfTZL4czVi2XVJUFZss4dpsqqSPbHP32JErFhJie9L_09CPkmsEdAyFmDHOW5HnKZuodGcIJmfxKp2QCPBcJ4yk_Jxch7AAYEwgTYud7aqw1OtafhnbeaRMCjY5607peMVFvaaVatRnc2vnBC6Y5FkxXR_Vdq4ZuvPuKW1rvKS7per5eUtuosKVtv-MPl-TMqiaYq-OdkreH-9fFU7J6eXxezFeJRsZjonXONS-1LcoSecXT0iIrsrQSGWKFvWM0ZgUCr7TOoEABIHJhEQ0IpgxOCYy72rsQvLGyf7pV_iAZyIGTHKDIAYocOfWV27FSu07u3Iff9w_-F7_5Ix5ClJjKUkKZAaSyqyz-ACfWdXg</recordid><startdate>20190901</startdate><enddate>20190901</enddate><creator>Luo, Liuyang</creator><creator>Lu, Zhiyong</creator><creator>Zou, Xingqi</creator><creator>Zhang, Yu</creator><creator>Zhang, Bao</creator><creator>Zhao, Chenglin</creator><creator>Zhao, Zhiguo</creator><creator>Li, Chunlong</creator><creator>Huo, Zongliang</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3434-8633</orcidid><orcidid>https://orcid.org/0000-0002-9843-6341</orcidid><orcidid>https://orcid.org/0000-0001-7029-396X</orcidid></search><sort><creationdate>20190901</creationdate><title>An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory</title><author>Luo, Liuyang ; Lu, Zhiyong ; Zou, Xingqi ; Zhang, Yu ; Zhang, Bao ; Zhao, Chenglin ; Zhao, Zhiguo ; Li, Chunlong ; Huo, Zongliang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-cc62c29cf79932d249f31754d8533d329cec357302dcc5073800868f33e081ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>damage remove</topic><topic>plasma treatment</topic><topic>selective epitaxial growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Liuyang</creatorcontrib><creatorcontrib>Lu, Zhiyong</creatorcontrib><creatorcontrib>Zou, Xingqi</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Zhang, Bao</creatorcontrib><creatorcontrib>Zhao, Chenglin</creatorcontrib><creatorcontrib>Zhao, Zhiguo</creatorcontrib><creatorcontrib>Li, Chunlong</creatorcontrib><creatorcontrib>Huo, Zongliang</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductor science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Liuyang</au><au>Lu, Zhiyong</au><au>Zou, Xingqi</au><au>Zhang, Yu</au><au>Zhang, Bao</au><au>Zhao, Chenglin</au><au>Zhao, Zhiguo</au><au>Li, Chunlong</au><au>Huo, Zongliang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory</atitle><jtitle>Semiconductor science and technology</jtitle><stitle>SST</stitle><addtitle>Semicond. Sci. Technol</addtitle><date>2019-09-01</date><risdate>2019</risdate><volume>34</volume><issue>9</issue><spage>95004</spage><pages>95004-</pages><issn>0268-1242</issn><eissn>1361-6641</eissn><coden>SSTEET</coden><abstract>An effective post etch treatment (PET) process was proposed to eliminate etch damage in the channel hole, of which the depth and the aspect ratio is beyond 3 m and 30:1 respectively, prior to selective epitaxial growth (SEG) in three dimensions (3D) NAND flash memory. In this work, it is demonstrated that the damaged layer both at the channel hole bottom and sidewall induced by capacitively coupled plasma (CCP) was effectively eliminated using low energy plasma of CL2 + NF3/CH2F2 in PET, and then obtaining an excellent surface condition in channel hole and fabricating a void-free SEG epitaxial layer.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6641/ab3130</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-3434-8633</orcidid><orcidid>https://orcid.org/0000-0002-9843-6341</orcidid><orcidid>https://orcid.org/0000-0001-7029-396X</orcidid></addata></record>
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subjects damage remove
plasma treatment
selective epitaxial growth
title An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T08%3A09%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20effective%20process%20to%20remove%20etch%20damage%20prior%20to%20selective%20epitaxial%20growth%20in%203D%20NAND%20flash%20memory&rft.jtitle=Semiconductor%20science%20and%20technology&rft.au=Luo,%20Liuyang&rft.date=2019-09-01&rft.volume=34&rft.issue=9&rft.spage=95004&rft.pages=95004-&rft.issn=0268-1242&rft.eissn=1361-6641&rft.coden=SSTEET&rft_id=info:doi/10.1088/1361-6641/ab3130&rft_dat=%3Ciop_cross%3Esstab3130%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true