Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors

A comparative study was performed to assess the gate length effect on trapping properties in AlGaN/GaN metal-oxide-semiconductor channel high-electron-mobility transistors. Deep level transient spectroscopy and electrical simulations were used to investigate the deep levels response in two devices w...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Semiconductor science and technology 2019-03, Vol.34 (4), p.45011
Hauptverfasser:	Ferrandis, Philippe, El-Khatib, Mariam, Jaud, Marie-Anne, Morvan, Erwan, Charles, Matthew, Guillot, Gérard, Bremond, Georges
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter DLTS Engineering Sciences gate length HEMT Materials Science Micro and nanotechnologies Microelectronics Physics simulation TCAD traps
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!