Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this d...

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Veröffentlicht in:Semiconductor science and technology 2017-11, Vol.32 (12), p.124003
Hauptverfasser: Simanjuntak, Firman Mangasa, Singh, Pragya, Chandrasekaran, Sridhar, Lumbantoruan, Franky Juanda, Yang, Chih-Chieh, Huang, Chu-Jie, Lin, Chun-Chieh, Tseng, Tseung-Yuen
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container_issue 12
container_start_page 124003
container_title Semiconductor science and technology
container_volume 32
creator Simanjuntak, Firman Mangasa
Singh, Pragya
Chandrasekaran, Sridhar
Lumbantoruan, Franky Juanda
Yang, Chih-Chieh
Huang, Chu-Jie
Lin, Chun-Chieh
Tseng, Tseung-Yuen
description An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.
doi_str_mv 10.1088/1361-6641/aa9598
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subjects electrochemical metallization device
nanorods
resistive switching
RRAM
title Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
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