Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Deep levels in metamorphic InAs/InxGa1−xAs quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same tec...

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Veröffentlicht in:	Semiconductor science and technology 2017-12, Vol.32 (12), p.125001
Hauptverfasser:	Golovynskyi, S, Datsenko, O, Seravalli, L, Kozak, O, Trevisi, G, Frigeri, P, Babichuk, I S, Golovynska, I, Qu, Junle
Format:	Artikel
Sprache:	eng
Schlagworte:	defect InAs/InGaAs nanostructure photoconductivity photoluminescence quantum dot thermally stimulated conductivity
Online-Zugang:	Volltext
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