The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because...

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Veröffentlicht in:Semiconductor science and technology 2017-08, Vol.32 (8), p.85001
Hauptverfasser: Kim, Miryeon, Sun, Wookyung, Kang, Jongseuk, Shin, Hyungsoon
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Sprache:eng
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light shield
low-temperature polycrystalline silicon (LTPS)
SPICE simulation
thin-film transistor (TFT)
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creator Kim, Miryeon
Sun, Wookyung
Kang, Jongseuk
Shin, Hyungsoon
description The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (Cgs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (Cg-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical Cg-LS model for SPICE simulation is proposed and verified.
doi_str_mv 10.1088/1361-6641/aa7477
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Sci. Technol</addtitle><description>The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (Cgs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (Cg-LS). 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subjects light shield
low-temperature polycrystalline silicon (LTPS)
SPICE simulation
thin-film transistor (TFT)
title The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT
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